Indium zinc oxide msds pdf

Material properties and preparation techniques scientific. Sixfold mobility improvement of indiumzinc oxide thinfilm transistors using a simple water treatment. Electrical and bandgap properties of amorphous zinc. Both a low resistivity cm and an average direct transmittance nm about 80% of the izo films were achieved. Immediately remove any clothing soiled by the product. Cardinal gracious road, chakala, andheri east, mumbai 400 099. Zinc is a leading producer of zinc oxide providing supply security in the u. Prolonged exposure of the skin may lead to dermatitis. Indium zinc oxide is generally immediately available in most volumes. Indium gallium zinc oxide pieces usage precautions read and follow manufacturers recommendations.

Zinc oxide material safety data sheet cas no 142 sds. Identification product identifier product name indium gallium zinc oxide pieces internal identification replaces m5000032 recommended use of the chemical and restrictions on use. It is also used in making coatings in architectural glass, low pressure sodium. Indium is an important byproduct of zinc metal processing operations. Mercaptopyridine n oxide zinc salt, pyrithione empirical formula hill notation. Exposure to high levels of dust or fume can cause metallic taste, ma and nausea followed by fever and chills. Material safety data sheet according to 19072006ec, article 31 date. The structure and properties of amorphous indium oxide. Indium zinc oxide as a transparent conductor for thin film solar cell applications j. As a result, doping range between 1% 5% demonstrated the lowest electrical resistivity, indicating an increase in donor concentration, which is attractive for many optical and. In the form in which it is sold this product is not regulated. High purity, submicron and nanopowder forms may be considered. Strem chemicals, inc 7 mulliken way newburyport, ma 019504098 u.

Zinc sulfate, heptahydrate, acs safety data sheet according to federal register vol. Inhalation of lead dust or fumes may cause irritation of upper. Material safety data sheet lts research laboratories, inc. Additional technical, research and safety msds information is available as is a. According to appendix d, osha hazard communication standard 29 cfr 1910. Dramatically superior transmission properties in the 11. Increased cosubstitution of zinc and tin snzn for indium was investigated to determine if the temperature range over which amorphous films could be grown could be extended.

Indium oxide films grown by pld at room temperature were crystalline yet the zito30 films were not. Keep away from food, drink and animal feeding stuffs. Indium phosphide y cut on diamond saw using slow feed. If you dont see the product specifications youre looking for, describe your specifications in the comment section. Identification of substance and of the companyundertaking 1. Pdf solutionprocessed indiumzinc oxide transparent. O is contracted relative to that found in the crystalline material. From tires and rubber to plastics and chemicals, zinc oxide is used in products people use every day. Indium zinc oxide as a transparent conductor for good. Zincindiumtin oxide zito films were grown by pulsedlaser deposition. Zinc oxide is an inorganic compound with the formula zn o. Electrical and bandgap properties of amorphous zincindium. It is also used in making coatings in architectural glass, low pressure sodium lamps, solar collectors, and windshield glass.

Indium zinc oxide izo nanofiber matrices are synthesized on sio 2 covered silicon substrates by the electrospinning method. Indium zinc oxide thin films deposited by sputtering at. The izo films were investigated as anodes in bulkheterojunction organic photovoltaic opv devices based on poly3hexylthiophene and 6,6phenyl c 61butyric acid methyl. Violent reaction may occur if magnesium powder or aluminum powder is heated with zinc oxide with the possibility of ignition.

G2 thin film string or generation2 single cell part number. Safety data sheet according to 29cfr19101200 and ghs rev. Zinc oxide gradually absorbs carbon dioxide upon exposure to air. Indium and other metal values are recovered during the production of primary commodities such as zinc by means of complex. The rare element indium in is generally not found as its own ore, but found in some natural minerals such as zinc deposits, sulfide ores of zinc, and lead and copper in varying contents from 10. Indiumdoped zinc oxide izo thin films were prepared by lowcost ultrasonic spray pyrolysis usp. Store containers in a cool dry location, away from direct sunlight, sources of intense heat, or where. The nanofibers dimensions, morphology, and crystalline structure. Indium gallium zinc oxide igzo is a semiconducting material, consisting of indium in, gallium ga, zinc zn and oxygen o. Chemical etch using 5% bromine by weight for about 2 minutes using a swirling motion. Your new online msds binder is a place for you to store the material safety data sheets you need to deploy. Indium metal is used in the production of indium tin oxide ito as the coating in flat panel display devices. Sds please email if you dont see the one you need please click this link to see all sdss. Three different material compositions were investigated.

Exothermic reaction will occur when mixed with flax oil with the possibility of ignition. Zno is a white powder that is insoluble in water, and it is widely used as an additive in numerous materials and products including rubbers, plastics, ceramics, glass, cement, lubricants, paints, ointments, adhesives, sealants, pigments, foods, batteries, ferrites, fire retardants, and firstaid tapes. Optical grade, usp and epbp european pharmacopoeiabritish pharmacopoeia and. Indium doped zinc oxide film was deposited from mixed precursor of indium and zinc salts in the atomic percent ratio, inzn 1% 9% using dip coating method. Zinc was discovered by indian metallurgists prior to bc and. Indium gallium zinc oxide, also known as igzo, or aigzo in its amorphous form in 2 ga 2 zno 7 is a transparent amorphous oxide semiconductor taps used in thinfilm transitors tfts and led devices. Show this safety data sheet to the doctor in attendance. American elements produces to many standard grades when applicable, including mil spec military grade. Igzotft was developed by hideo hosono s group at tokyo institute of technology and japan science and technology agency.

Inoh 3 4 firstaid measures fi description of first aid measures general description. Exposure to high levels of dust or smoke can lead to. Igzo is generally immediately available in most volumes. Violent reaction may occur if chlorinated rubber and zinc oxide are heated to 215c. Indium corporation does not recommend, manufacture, market, or endorse any of our products for human consumption. Powder or zinc oxide fumes can irritate the respiratory tract. To the best of our knowledge the ch emical, physical and toxicological pr operties of tungsten oxide have. Indium zinc oxide, izo in2o3 zno, 9010 wt% sputtering targets.

Indium zinc oxide thin films deposited by sputtering at room. Page 1 of 6 safety data sheet sds zinc oxide section 1 identification of the substance and of the. Page 1 of 6 safety data sheet sds zinc oxide section 1 identification of. Zito30, zito50 and zito70 in which 30%, 50% and 70%, respectively, of the indium in the in 2 o 3 structure was replaced by substitution with zinc and tin in equal molar proportions cosubstitution. Zno cas no 142 ec no einecs 2152225 index number clp regulation. Material safety data sheet zinc oxide section 1 chemical product and company identification msds name. Thinfilm photovoltaic copper indium gallium diselenide solar string or cell trade names. Our msds database is an easy to use, do it yourself tool, and best of all. Indium tin oxide ito was nominated by the national institute of.

Other companies are charging thousands of dollars to set up accounts and give you access to their msds online database. We manufacture and distribute sputtering targets and evaporation materials for all sputtering tools. English safety data sheets technical documents indium. It provides high chemical purity and excellent physical properties. In this paper, we report on the sputter deposition of amorphous izo films on glass substrates near room temperature using a single target. Zinc oxide zno nanopowder nanoparticles us research nanomaterials, inc. Tantalum material safety data sheet, page 1 of 4 material safety data sheet admat inc p. Pdf solutionprocessed indiumzinc oxide transparent thin.

Sara aluminum oxide is not an extremely hazardous substance in section 302 and is not a toxic chemical subject to the requirements of 3. The number of electrons in each of zinc s shells is 2, 8, 18, 2, and its electron configuration is ar 3d 10 4s 2. Zinc oxide cas no 142 material safety data sheet sds msds. This msds is provided for information purposes only. Safety data sheet library technical documents indium. All of indium corporations products and solutions are designed to be commercially available unless specifically stated otherwise. Material properties of indium zinc oxide thin films and all the techniques used to deposit thin films are summarized with an elaborative account along with our results. When heated to decomposition, tungsten oxide may emit toxic fumes. Igzo thinfilm transistor tft is used in the tft backplane of flatpanel displays fpds. A promising material is indium zinc oxide izo which has a larger work function and higher transmission in 11. Electrical, optical, and structural properties of indium tin oxide thin films for organic lightemitting devices. Selfaligned topgate amorphous indium zinc oxide thin.

Indium tin oxide ito in order to etch ito it is needed to reduce it to a metallic state. Zinc oxide dust or fume can irritate the respiratory tract. Wear protective clothing as described in section 8 of this safety data sheet. Selfaligned topgate amorphous indium zinc oxide thinfilm transistors exceeding lowtemperature polysi transistor performance. May have a violent reaction with lithium, clf 3 and cl 2. Review sputtering gun manual to determine appropriate target size. Nicholas alexander1, neville sun2, richard sun2, harry efstathiadis1 1 state university of new york polytechnic institute, colleges of nanoscale science and engineering, 257 fuller rd.

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